Syllabus



Unit I: Semiconductor Diodes and Rectifiers (8 Hours / 8 Marks)

1.1 Operation and characteristics of PN junction diode
1.2 Avalanche and Zener breakdown mechanisms
1.3 Rectifiers:

• Half-wave rectifier

• Full-wave rectifier
  (Ripple factor, efficiency, and PIV ratings)

1.4 Filters:

• C filter

• L filter

• Π (Pi) filter

Unit II: Junction Transistors (8 Hours / 8 Marks)

2.1 NPN and PNP transistor: Construction and working
2.2 Transistor configurations:

• CB (Common Base)

• CE (Common Emitter)

• CC (Common Collector)

2.3 Leakage currents
2.4 Input and output characteristics of CE mode
2.5 Relation between α and β
2.6 UJT: Construction, working, and characteristics
2.7 FET: Construction, working, and characteristics
2.8 MOSFET: Construction, working, and characteristics

Unit III: Optoelectronic Devices (7 Hours / 7 Marks)

3.1 LDR: Construction, working, and characteristics
3.2 LED: Construction, working, and characteristics
3.3 Photodiode: Construction, working, and characteristics
3.4 Phototransistor: Construction, working, and characteristics
3.5 Photovoltaic (Solar) cell: Construction, working, and characteristics

Unit IV: Integrated Circuits and Embedded Systems (8 Hours / 8 Marks)

4.1 Introduction to IC technology
4.2 Advantages and disadvantages of ICs
4.3 Classification of ICs
4.4 Scale of integration up to V2LSI
4.5 Basic steps in fabrication of monolithic ICs
4.6 Fabrication of:

• Resistor

• Diode

• Transistor

  4.7 Basic concept of Embedded systems

 Student will be able to design and build power supply.

• Design various circuits using various transistors.

• Able to make various applications of optoelectronics devices.

• Will acquire the knowledge about integration of electronics components for IC fabrication.